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Ossila材料m-MTDATA

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产品名称: Ossila材料m-MTDATA
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产品展商: Ossila
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简单介绍

m-MTDATA, effective HIL material to lower driving voltage of OLED devices


Ossila材料m-MTDATA  的详细介绍

With its very low solid-state ionisation potential and good-quality amorphous film, 4,4',4''-Tris[phenyl(m-tolyl)amino]triphenylamine, m-MTDATA acts as an effective material for the hole-injection buffer layer (HIL) that facilitates hole injection from the ITO electrode to the hole transporting layer (HTL). This potentially lowers the driving voltage of the OLED devices.

F4-TCNQ, a strong electron acceptor, is always used together with m-MTDATA as a p-doping material to improve the conductivity of the HTL buffering layer. Typical structure of the device (or part of the device) is ITO/p-doped m-MTDATA/HTL/etc.

General Information

CAS number 124729-98-2
Chemical formula C57H48N4
Molecular weight 789.02 g/mol
Absorption λmax 312 nm, 342 nm in THF
Fluorescence λem 425 nm in THF
HOMO/LUMO HOMO 5.1 eV, LUMO 2.0 eV [1]
Synonyms 4,4',4''-Tris[(3-methylphenyl)phenylamino]triphenylamine
Classification / Family Triphenylamine derivatives, Hole-injection materials, Hole transporting materials, Light-emitting diodes, Organic electronics

Product Details

Purity Sublimed* >99.0% (HPLC)
Melting point 210 °C
Appearance Yellow/white powder

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials for OLED devices page.

Chemical Structure

Chemical structure of m-MTDATA
Chemical Structure of 4,4′,4′′-Tris[phenyl(m-tolyl)amino]triphenylamine (m-MTDATA)

Device Structure(s)

Device structure ITO/MoOx (2 nm)/m-MTDATA: MoOx (30 nm, 15 wt.%)/m-MTDATA
(10 nm)/Ir(ppz)3 (10 nm)/CBP:PO-01* (3 nm, 6 wt.%)/Ir(ppz)3
(1 nm)/DBFDPOPhCz*:FIrpic (10 nm,10 wt.%)/Bphen (36 nm)/LiF
(1 nm)/Al [3]
Colour White white light emitting device
Max. EQE 12.2%
Max. Current Efficiency 42.4 cd/A
Max. Power Efficiency 47.6 lm W−1
Device structure ITO/[F4-TCNQ(x nm)/m-MTDATA(y nm)]n/NPB/Alq3/Bphen/Cs2CO3/Al [4]
Colour Green green light emitting device
Max. Luminance 23,500 cd/m2
Max. Current Efficiency 7.0 cd/A
Max. Power Efficiency 4.46 lm W−1  
Device structure ITO/PEDOT:PSS(40nm)/m-MTDATA:Ir(Flpy-CF3)3 (40nm)/TmPyPB(55nm)/LiF(0.5nm)/Al(100nm) [5]
Colour Yellow yellow device
Max. EQE 25.2%
Max. Luminance  43,085 cd/m2
Max. Current Efficiency 74.3 cd/A
Max. Power Efficiency 97.2 lm W−1
Device structure ITO/PEDOT:PSS/m-MTDATA (20 nm)/m-MTDATA:3TPYMB (60 nm)/3TPYMB (10 nm)/LiF (0.8 nm)/ Al (100 nm) [6]
Colour Red red light emitting device
Max. Luminance 17,100cd/m2
Max. Current Efficiency 36.79 cd/A
Device structure ITO (80 nm)/m-MTDATA (20 nm)/NPB (20 nm)/[ADN:Alq3 (4:1)]:1wt.% DCJTB:0.2wt.%C545T/Alq3 (30 nm)/LiF (1 nm)/Al (100 nm) [7]
Colour Red red light emitting device
Max. Luminance 11,600 cd/m2
Max. Current Efficiency 3.6 cd/A 
Device structure ITO/m-MTDATA*:F4-TCNQ (100 nm)/TPD (5 nm)/Alq3 (20 nm) /BPhen (10 nm)/ Bphen:Li (30 nm)/LiF (1 nm)/Al (100 nm) [8] 
Colour Green green light emitting device
Max. Luminance 10,000 cd/m2 at 5.2 V
Max. Current Efficiency 5.27 cd/A
Device structure  ITO/m-MTDATA (30 nm)/NPB (20 nm)/TPBI:4 wt% Ir(ppy)3:2 wt%Ir(piq)2(acac) (30 nm)/Alq3(20 nm)/LiF/Al [9]
Colour White white light emitting device
Max. Luminance 33,012 cd/m2
Current Efficiency@100 cd/m2 15.3 cd/A
Max. Powder Efficiency 10.7 lm W−1
Device structure ITO/m-MTDATA/TPD/F-TBB*/Alq3/MgAg [10]
Colour Blue blue light emitting device
Max EQE 1.4%
Maximum luminance 3960 cd m-2 at 15.0 V



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