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ossila材料PATPA

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产品名称: ossila材料PATPA
产品型号: 136905-60-7
产品展商: Ossila
产品文档:
 MSDS patpa

简单介绍


ossila材料PATPA  的详细介绍

Featuring a rigid phenyl linking group with a phosphonic acid anchor and a diphenylamine terminal, PATPA is a high-performance self-assembled monolayer materials for perovskite solar cells. As a hole selection layer (HSL) on ITO in the inverted p-i-n structure perovskite solar cell, PATPA is designed to enhance interfacial contact and improve the quality of perovskite films. The rigid phenyl linker enables a dense molecular packing that minimizes interfacial defects and reduces charge recombination, outperforming more flexible alternatives like 2PATPA with flexible linking group and PhpPACz with more rigid terminal carbazole group.

Perovskite solar cell device based on PATPA as the hole transport layer (HTL) has achieved a power conversion efficiency (PCE) of over 26.21% with enhanced stability, retaining up to 91% of their initial efficiency after 1000 hours of light exposure.

Serving as hole selective contact for organic solar cells and perovskite solar cells, PATPA is an alternative to PEDOT:PSS with superior performance and the convenience of solution deposition at low concentration, i.e. 1 mM.

General Information


CAS Number 136905-60-7
Chemical Formula C18H16NO3P
Molecular Weight 325.30 g/mol
Absorption* λmax 303 nm (in solution)
Fluorescence λem (n.a.)
HOMO/LUMO HOMO = -5.32 eV, LUMO = -2.06 eV
Synonyms (4-(Diphenylamino)phenyl)phosphonic acid, Phosphonic acid, p-[4-(diphenylamino)phenyl]-
Classification or Family Triphenyl amines, Self-assembly monolayers, Hole transport layer, Hole selection layer, p-i-n Perovskite solar cells

Product Details


Purity > 98% (HPLC)
Melting Point N/A
Appearance White to off-white powder

Solution Processing Procedure


Typical processing solvents: Methanol, ethanol
Typical suggested concentration: 1.0 mg/ml or 1.0 mM
Typical processing procedure: PATPA solution is spin-coated onto ITO surface for 30 s at the speed of 3000 rpm, followed by annealing for 10 min at 100 ℃ (from the fabrication of devices DOI: 10.1038/s41467-025-62388-4).

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