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简单介绍：
DBP, promising organic small-molecule semiconductor
详情介绍：

5,10,15,20-Tetraphenylbisbenz[5,6]indeno[1,2,3-cd:1′,2′,3′-lm]perylene (DBP), also known as tetraphenyldibenzoperiflanthene, is a promising organic small-molecule semiconductor. It can be used as either an electron donor or acceptor for highly efficient photovoltaic and OLED applications.

With perylene as an electron-rich core and extended conjugations, DBP can also be used in photovoltaic light-emitting diodes (PVOLEDs) devices as an electron-donating layer (EDL) material.

General Information

CAS number 175606-05-0
Full name 5,10,15,20-Tetraphenylbisbenz[5,6]indeno[1,2,3-cd:1′,2′,3′-lm]perylene
Chemical formula C64H36
Molecular weight 804.97 g/mol
Absorption* λmax 333 nm in THF
Fluorescence λem 610 nm in THF
HOMO/LUMO HOMO = 5.5 eV, LUMO = 3.5 eV [1]
Synonyms Tetraphenyldibenzoperiflanthene, Dibenzo{[f,f′]-4,4′,7,7′-tetraphenyl}diindeno[1,2,3-cd:1′,2′,3′-lm]perylene, Red 2 
Classification / Family Perylene derivatives, Hydrocarbons, Red dopant TADF materials, Phosphorescent organic light-emitting devices (PHOLEDs), Photovoltaics, Sublimed materials

* Measurable with an optical spectrometer, see our spectrometer application notes.

Product Details

Purity Sublimed* >99.0% (HPLC)
Melting point TGA: >350 °C (0.5% weight loss)
Appearance Red powder/crystals

*Sublimation is a technique used to obtain ultra pure-grade chemicals. For more details about sublimation, please refer to the Sublimed Materials for OLED devices page.

Chemical Structure

Chemical structure of DBP
Chemical Structure of 5,10,15,20-Tetraphenylbisbenz[5,6]indeno[1,2,3-cd:1′,2′,3′-lm]perylene (DBP).

Device Structure(s)

Device structure ITO/α-NPD (30 nm) /DPEPO (10 nm)/TPBi (40 nm)/1 wt% DBP:10 wt% TTPA:mCP (8 nm)/mCP (2 nm)/DMACDPS (7.5 nm)/LiF (0.5 nm)/Al (100 nm) [1]
Colour White white light emitting device
Max. EQE 12.1%
Max. Power Efficiency 22 Im/W
Device structure ITO/CFx/NPB (60 nm)/ Rubrene+ 1% DBP (40 nm)/DBzA (20 nm)/LiF (1 nm)/Al [2]
Colour Red red light emitting device
Current Efficiency@ 20 mA/cm2 5.4 cd/A
EQE@ 20 mA/cm2 4.7%
Power Efficiency@ 20 mA/cm2 5.3 Im/W
Device structure ITO (95 nm)/ HATCN (5 nm)/TAPC (20 nm)/CBP: 7 wt% NI-1-PhTPA (10 nm)/CBP (3 nm)/CBP: 3 wt% PXZDSO2 (5 nm)/CBP: 5 wt% PXZDSO2: 0.3 wt% DBP (5 nm)/CBP: 3 wt% PXZDSO2 (5 nm)/CBP (3 nm)/CBP: 7 wt% NI-1-PhTPA (10 nm)/TmPyPB (55 nm)/LiF (1 nm)/Al (100 nm) [3]
Colour White white light emitting device
Max. Current Efficiency 51.4 cd/A
Max. EQE 19.2%
Max. Power Efficiency 47.5 Im/W
Device structure ITO (95 nm)/ HATCN (5 nm)/TAPC (20 nm)/ CBP: 10 wt% NI-1-PhTPA (10 nm)/CBP (3 nm)/CBP: 3 wt% PXZDSO2 (5 nm)/CBP: 5 wt% PXZDSO2: 0.35 wt% DBP (5 nm)/ CBP: 3 wt% PXZDSO2 (5 nm)/CBP (3 nm)/CBP: 10 wt% NI-1-PhTPA (10 nm);/TmPyPB (55 nm)/LiF (1 nm)/Al (100 nm) [3]
Colour White white light emitting device
Max. Current Efficiency 42.2cd/A
Max. EQE 17.3%
Max. Power Efficiency 38.4 Im/W
Device structure ITO (95 nm)/PEDOT:PSS (40 nm)/2 wt% DBP:15 wt% DC-TC*:CBP (40 nm)/TmPyPB (50 nm)/LiF (1 nm)/Al (100 nm) [4]
Colour Red red light emitting device
Current Efficiency@ 100 mA/cm2 10.15 cd/A
EQE@ 100 mA/cm2 6.65%

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