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Silicon Wafers Type P
These silicon wafers can be used for substrate studies or as substrate for AFM and SEM samples by cleaving the wafer.
Specifications
| 1" | 2" | 3" | 4" | 6" | |
| Material: | Silicon | Silicon | Silicon | Silicon | Silicon |
| Diameter: | 25 mm | 50 mm | 76 mm | 100 mm | 150 mm |
| Orientation: | <100> | <100> | <111> | <100> | <100> |
| Resistance: | 1-30 Ohms | 1-30 Ohms | 1-30 Ohms | 1-30 Ohms | 1-30 Ohms |
| Type P: | Boron - 1 primary flat | Boron - 1 primary flat | Boron - 1 primary flat | Boron - 1 primary flat | Boron - 1 primary flat |
| SiO2 top coating: | None | None | None | None | None |
| Wafer Thickness: |
10-12 mill (254-304µm) |
9-13 mill (230-330µm) |
13.6-18.5 mill (345-470µm) |
18.7-22.6 mill (475-575µm) |
23.6-25.2 mill (600-690µm) |
| Roughness: | 2nm | 2nm | 2nm | 2nm | 2nm |
| TTV: | <20µm | ||||
| Polished: | on one side | on one side | on one side | on one side | on one side |
Ordering
| 71893-04 | Silicon Wafer Type P, 1" | each |
| 71893-05 | Silicon Wafer Type P, 2" | each |
| 71893-06 | Silicon Wafer Type P, 3" | each |
| 71893-07 | Silicon Wafer Type P, 4" | each |
| 71893-08 | Silicon Wafer Type P, 6" | each |