Experimental
OFET device specifications
This table shows details of the substrates used in this fabrication routine.
|
Substrates
|
Ossila silicon/silicon dioxide substrates (S146)
|
|
Substrate size
|
20 x 15 mm
|
|
Gate conductivity
|
1-30 Ω·cm (Boron doped)
|
|
Silicon oxide thickness
|
300 nm
|
|
Device per substrates
|
Five, common gate
|
|
Channel length
|
30 µm
|
|
Channel width
|
1000 µm
|
|
OFET architecture
|
Top contact, bottom gate
|
|
Source-Drain patterning
|
Thermal evaporation using Source-Drain Deposition Mask for Low Density OFETs
|
