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  • 产品名称：SIO2基板21620-6

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  • 产品厂商：Ted pella
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简单介绍：
200nm Thermal Oxide on ø6" Ultra-Flat Wafer, Type <100>, in 6" wafer carrier
详情介绍：
6" Silicon Wafer
Ultra-Flat Thermal 6" SiO2 Wafer
5 x 5mm SiO2 diced wafer
5 x 5mm Diced Ultra-flat Thermal SiO2 Substrates

Ultra-Flat Thermal SiO2 Substrates

The Ultra-Flat SiO2 substrates consist of a 200nm thermally grown amorphous SiO2 film on an ultra-flat silicon wafer. SiO2 is one of the most characterized materials and is widely used in semiconductor manufacturing, thin film research and as substrate for growing cells. It can be directly used as substrate for AFM and SEM imaging. The ultra-flat thermal silicon dioxide substrates are available in 6" wafer and conveniently diced 5 x 5mm, 5 x 7mm and 10 x 10mm chips. The 6" wafer is shipped in a 6" wafer carrier, the diced pieces are shipped in a Gel-Pak® box.

The special clean dicing process involves coating the wafer with photo resist before dicing and removing it after dicing which produces debris-free SiO2 substrates. All products are packed in class 10 clean room conditions.

Properties for thermal SiO2 substrates:

  • Material: CZ Virgin Silicon Wafer
  • Grade: Prime
  • Diameter: 150mm
  • Orientation: <100>
  • Type/Dopant: P/Boron
  • Resistivity: 10-20 Ohm-cm
  • Thickness: 675 +/- 25µm
  • TTV: ≤2µm
  • Site Flatness: ≤1µm
  • Warp: ≤30µm
  • Bow: ≤20µm
  • Particles: ≤20@≥0.2µm
  • Front Surface: Polished
  • Back Surface: Etched
  • Flat: 1 per SEMI Standard
  • 2000A +/- 5% Thermal Oxide
Prod # Description Unit
21620-6 200nm Thermal Oxide on ø6" Ultra-Flat Wafer, Type <100>, in 6" wafer carrier each
21620-55 200nm Thermal Oxide on 5 x 5mm diced Ultra-Flat Wafer, Type <100>, in Gel-Pak® box box/25
21620-57 200nm Thermal Oxide on 5 x 7mm diced Ultra-Flat Wafer, Type <100>, in Gel-Pak® box box/18
21620-510 200nm Thermal Oxide on 10 x 10mm diced Ultra-Flat Wafer, Type <100>, in Gel-Pak® box box/6

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