SEM和光学显微镜中的放大率校准或图像扭曲失真检查,不带证书的版本。标样材质为单晶硅,厚度675µm,硅晶体取向为<100>,5mmx 5mm,正方形每10µm重复一次,分界线宽约1.9µm,由电子束光刻形成。每500µm(0.5mm)有一条更宽的标记线,可用于光学显微镜的图像检测。刻蚀线条深度约为300nm。
Many types of samples can be mounted directly onto the Silicon Test Specimen so that an internal calibration is obtained in the image. Thickness: 675µm Si crystal orientation: <100> Wafer type: P-type/boron doped Resistance: 1-30 Ohm/cm